Defect creation and development at the polysilicon-silicon interface during a cold technology simulation
نویسندگان
چکیده
2014 A simulation of a cold technology ( 950 °C) has been analysed by X-ray topography at different stages of its elaboration. It is shown first that an elastic deformation occurs straight below the edges of the film pattern. Then, point defects are generated at the polysilicon-silicon interface upon oxidation. Finally the crystalline quality is perturbed in the whole bulk wafer upon further chemical and heat treatments. Revue Phys. Appl. 19 (1984) 941-943 NOVEMBRE 1984, PAGE Classification Physics Abstracts 85.30D 61.70R
منابع مشابه
TCAD based development of a polysilicon emitter transistor in a BiCMOS technology
Continuing advances in silicon integrated circuit technology lead to todays very large scale integrated circuits with several millions of transistors per single chip. High density and low power consumption advantage made CMOS technology to the leading silicon fabrication technology. Over the last decade the demand for higher speed and better analog circuit gave rise to the BiCMOS technology, wh...
متن کاملEffect of Temperature on Electrical Parameters of Phosphorous Spin–on Diffusion of Polysilicon Solar Cells
Effects of temperature on electrical parameters of polysilicon solar cells, fabricated using the phosphorous spin-on diffusion technique, have been studied. The current density–voltagecharacteristics of polycrystalline silicon solar cells were measured in dark at different temperaturelevels. For this purpose, a diode equivalent model was used to obtain saturation current densi...
متن کاملPhotonic-electronic integration with polysilicon photonics in bulk CMOS
Here, I review the development of a polysilicon photonic platform that is optimized for integration with electronics fabricated on bulk silicon wafers. This platform enables large-scale monolithic integration of silicon photonics with microelectronics. A single-polysilicon deposition and lithography mask were used to simultaneously define the transistor gate, the low-loss waveguides, the deplet...
متن کاملSimulation of the effect of sub- micron interface roughness on the stress distribution in functionally graded thermal barrier coatings (FG- TBC)
In this research, a numerical modeling was utilized to calculate the stresses caused during thermal cycling in a functionally graded thermal barrier coating (FG - TBC). The temperature – dependent material response of this protective material was taken into account and the effects of thermal cycle and interface morphology of the ceramic / metallic layer in functionally graded coating system wa...
متن کاملTwo-dimensional numerical simulations of 1/f noise by GR mechanisms in thin film transistors: Effects of induced defect technology
Two dimensional (2D) numerical simulation of low-frequency (1/f) noise is carried out in N-channel polysilicon thin film transistors biased from weak to strong inversion. Noise is simulated by Generation-Recombination processes. Simulation is based on the impedance field method of Shockley. A 2D analysis of the local noise level shows that contribution at grain boundaries dominates from weak to...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2017